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How to Improve Industrial Control Storage Performance in 5G Era?

Date:2019/03/27 Read:1098

In recent years, the development of IoT has picked up its momentum. Reported by IoT Analytics, the year 2018 witnessed the boost of global IoT devices reaching up to 7 billion units; by 2020, the number of IoT devices is expected to increase to 10 billion units. In terms of the scale of this industry, it underwent a growth from 50 billion dollars in 2008 to nearly 151 billion dollars in 2018. Predicted by the White Paper: The China's 5G Industry and Application Development in 2018, by 2025, the number of IoT connections in China will achieve 5.38 billion, of which the number of 5G IoT connections will come up to 3.93 billion.

The core advantage of 5G technology lies in its large bandwidth, low latency, endless connections, and rigorous coverage. Compared with 4G, the peak speed of 5G is 30 times that of 4G, the user experience data is 10 times, and the traffic density is enhanced by 100 times. The 5G technology accelerates the interconnection of everything, contributing to the exponential growth of data. In this trend, the demand for data storage by enterprises has increased remarkably, and the performance requirements for storage devices have increasingly become high.

At present, considering the special needs of industrial applications, in order to achieve high-performance data storage, among the solutions given by enterprises, the three most feasible options are:

  1. The SSD with NVMe protocol;
  2. The stereo-storage unit with 3D NAND;
  3. The upgraded memory chip with DDR4 2666 MT/s. As a forerunner in the industry, BIWIN has developed mature products, technologies and accumulated rich project experience.

NVMe SSD: High Speed and Low Latency

The NVMe SSD is a storage upgrade generally adopted by enterprises and users. Through PCIe Bus, NVMe is an interface standard that connects storage to servers. The PCIe SSD is designed with NVMe protocol:

  1. It can directly connect the CPU nearly without latency.
  2. It parallelizes IO access via multiple queues to transfer data. These two characteristics of the NVMe interface can maximize the potential of SSDs.

Comparison of Interface Theoretical Speed

Compared with SATA/SAS SSD, the NVMe SSD boasts a several-fold enhancement. Take BIWIN product as an example. Built with NVMe 1.3 interface, the maximum sequential read speed and the maximum sequential write speed of the AIC PCIe SSD reach 3064 MB/s and 1763 MB/s respectively; and while designed with the SATA 3 interface, the 2.5 SATA SSD delivers the maximum sequential read speed 540 MB/s and the maximum sequential write speed 450 MB/s.

Accordingly, the difference between them is self-evident.

3D NAND: Excels in Capacity, Cost and Performance

It is not only the interface that affects the performance of SSD data storage, but also the form of NAND does. Although 2D NAND is still widely used, its technological development has arrived at bottleneck, increasingly unable to meet the needs of higher standards, especially the needs of industrial applications. The processing technology of 2D NAND has evolved from the early 50nm to the current 15/16nm. By doing this, it increases capacity and reduces costs, but its reliability and performance declines. These performances are contributed to the fact that the thinner the oxide layer of NAND, the greater the interference between Cells, and the slower the speed of data read and write.


Unlike the processing technology used to improve 2D NAND, the way to increase the capacity of 3D NAND is to stack more layers. Intel once introduced 3D NAND with building as an example. Concerning that, 2D NAND is a bungalow, while 3D NAND is a skyrocketed building. Designed with a higher capacitance per unit area, the manufacturing process of 3D NAND is much lower than that of 2D NAND for chips with a specific capacity. For instance, a 40nm process can be adopted. This effectively reduces the interference between cells, meanwhile boosting the read and write speeds. BIWIN embraces 3D NAND flash memory for large-capacity, blazing-speed of high-end industrial SSD products, and designs LDPC error correction algorithms to step up product stability.

DDR4-2666MT/s:New-gen Memory Standard Specifications

In the field of industrial application, memory can also be upgraded to optimize the performance of server storage. DDR4-2666MT/s enhances the maximum data frequency to 2666MT/s, which perfectly matches the maximum frequency of the CPU setting, fully unleashing the computing capability of the server. It is available in capacities ranging from 4 GB to 16 GB, which meets the needs of all industrial applications, including rigorous and enduring servers, automation, network switches and monitoring, etc.

Development of DDR

BIWIN has its own packaging and testing factory. In terms of industrial automation control, it can provide clients with different and customized packaging. For 1U server, we adopt the low-height DIMM module design to improve air-flow cooling system in micro space; for harsh environments such as mining and chemical industries with large temperature differential, we adopt a wide temperature module design of -40 ℃ - 85 ℃; For high-reliability and stable system-based applications, we strictly test selected flash memory particles and equip them with thermal sensors to ensure good data integrity and high-speed transmission.

As NAND flash memory has entered the 3D era from 2D, the number of 3D NAND stacking layers has changed from 24/32 layers to 64/72 layers, to 96 layers, and even 128 layers. Under the Moore's Law, the data storage technology witnesses a rapid development. One of BIWIN's advantages is that it can combine the actual needs and application environment of industrial-control companies to tailor the best storage solutions for customers. By doing this, we help enterprises and customers obtain real-time data and become a forerunner in competition.



BIWIN Storage Technology Company Limited ("BIWIN") produces high-quality flash storage and memory-- and is known in consumer, corporate and industrial segments for its independent development capabilities in hardware, software, firmware, and storage algorithms.

BIWIN's experience in production (also along with its complete in-house IC packaging, testing, and SMT production lines) ensures BIWIN products are superior in performance, earning BIWIN many awards and a reputation for providing global customers with high-quality storage and memory products. The company's latest facility, the BIWIN Huizhou Science and Technology Campus, features a state-of-the-art R&D lab and 110,000 ㎡ of production.


Product line: embedded memory chip, USB storage module, memory card, solid-state drive, package testing

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